| PART |
Description |
Maker |
| HX1 HX1-173.225-3 HX1-169.4125-3 HX1-168.360-3 HX1 |
VHF Narrow Band FM 300mW Transmitter
|
Radiometrix Ltd
|
| AFS5-10951175-09-10P-5 AFS42-04400510-07-10P-44 AF |
10950 MHz - 11750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
4400 MHz - 5100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2200 MHz - 2300 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
1400 MHz - 1700 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6700 MHz - 7100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
700 MHz - 800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
7900 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| AMF-4F-122128-10-12P AMF-4F-009015-04-13P AMF-2F-0 |
12200 MHz - 12800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
950 MHz - 1450 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
5800 MHz - 6500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
7250 MHz - 7750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| BGY145C |
VHF amplifier module 174 MHz - 200 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| MS1506 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 40; P(in) (W): 5; Gain (dB): 9; Vcc (V): 13.6; Cob (pF): 95; fO (MHz): 0; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| MS1337 |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 30; P(in) (W): 3; Gain (dB): 10; Vcc (V): 12.5; Cob (pF): 120; fO (MHz): 0; Case Style: M113 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| NTE5005SM NTE5031SM NTE5027SM 5031SM NTE5006SM NTE |
(NTE5005SM - NTE5031SM) Zener Diode / 300mW 5% Tolerance
Zener Diode, 300mW ±5% Tolerance
Zener Diode, 300mW % Tolerance
Zener Diode, 300mW 5% Tolerance
Zener Diode 300mW 5% Tolerance
Zener Diode, 300mW 【5% Tolerance
15 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
NTE[NTE Electronics]
|
| AU-1049-70-1179 AU-1049-70-N-1179 AU-1372-140-N AU |
50 MHz - 90 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
100 MHz - 180 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
30 MHz - 500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
50 MHz - 1000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
MITEQ INC
|
| KTK161 |
FM RF,AM RF,VHF Band Amp.
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY/ VHF BAND AMPLIFIER)
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER) N通道结FIFLD EFFFCT晶体管（高频，甚高频波段放大器）
|
Korea Electronics (KEC)
KEC(Korea Electronics)
KEC Holdings
|
| 2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| JDP2S01S |
UHF~VHF Band RF Attenuator Applications 甚高频波段超高频射频衰减器的应用
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MA2C856 |
Band Switching Diodes SILICON, VHF BAND, MIXER DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
